Maximum Continuous Drain Current:
5.9 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
90 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Channel Type:
P
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Minimum Operating Temperature:
-65 °C
Base Part Number:
NDT454
Detailed Description:
P-Channel 30V 5.9A (Ta) 3W (Ta) Surface Mount SOT-223-4
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 5.9A, 10V
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Power Dissipation (Max):
3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
