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ON Semiconductor NDS356AP

NDS356AP ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NDS356
Gate Charge (Qg) (Max) @ Vgs:
4.4nC @ 5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NDS356AP. It has typical 52 weeks of manufacturer standard lead time. It features p-channel 30v 1.1a (ta) 500mw (ta) surface mount sot-23-3. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: nds356. The maximum gate charge and given voltages include 4.4nc @ 5v. It has a maximum Rds On and voltage of 200mohm @ 1.3a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 280pf @ 10v. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.1a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.

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NDS356AP, P-Channel Logic Level Enhancement Mode Field Effect Transistor(Technical Reference)
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Mult Dev Assembly Chgs 12/Jul/2020(PCN Assembly/Origin)
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Mold Compound 08/April/2008(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor NDS356AP. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor NDS356AP. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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