Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Detailed Description:
P-Channel 60V 180mA (Ta) 360mW (Ta) Surface Mount SOT-23
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NDS060
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
79pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
180mA (Ta)
Customer Reference:
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
