Dimensions:
10.67 x 8.84 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
100 W
Height:
4.58mm
Width:
8.84mm
Length:
10.67mm
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Configuration:
Single
Maximum Operating Temperature:
+175 °C
Pin Count:
2 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
13 Weeks
Detailed Description:
N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
NDB6060
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 5V
Rds On (Max) @ Id, Vgs:
20mOhm @ 24A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Customer Reference:
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
