ON Semiconductor MTY100N10E

MTY100N10E ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MTY10
Detailed Description:
N-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-264
Input Capacitance (Ciss) (Max) @ Vds:
10640pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
378nC @ 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 50A, 10V
Supplier Device Package:
TO-264
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-264-3, TO-264AA
Power Dissipation (Max):
300W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MTY100N10E. Base Part Number: mty10. It features n-channel 100v 100a (tc) 300w (tc) through hole to-264. The product's input capacitance at maximum includes 10640pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 378nc @ 10v. It has a maximum Rds On and voltage of 11mohm @ 50a, 10v. to-264 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-264-3, to-264aa. The product carries maximum power dissipation 300w (tc). The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2004(PCN Obsolescence/ EOL)
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MTY100N10E(Datasheets)

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