Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
10 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
MTD30
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
3.9W (Ta), 48W (Tc)
Technology:
MOSFET (Metal Oxide)
