ON Semiconductor MGSF1N02LT1

MGSF1N02LT1 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MGSF1
Detailed Description:
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
125pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
90mOhm @ 1.2A, 10V
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
400mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
750mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MGSF1N02LT1. Base Part Number: mgsf1. It features n-channel 20v 750ma (ta) 400mw (ta) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 125pf @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 90mohm @ 1.2a, 10v. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 400mw (ta). The continuous current drain at 25°C is 750ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 11/Feb/2009(PCN Obsolescence/ EOL)
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MGSF1N02L, MVGSF1N02L(Datasheets)

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