ON Semiconductor IRF540A

IRF540A ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
IRF54
Detailed Description:
N-Channel 100V 28A (Tc) 107W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
1710pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
100V
Gate Charge (Qg) (Max) @ Vgs:
78nC @ 10V
Rds On (Max) @ Id, Vgs:
52mOhm @ 14A, 10V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
107W (Tc)
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is IRF540A. Base Part Number: irf54. It features n-channel 100v 28a (tc) 107w (tc) through hole to-220-3. The product's input capacitance at maximum includes 1710pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 100v drain to source voltage. The maximum gate charge and given voltages include 78nc @ 10v. It has a maximum Rds On and voltage of 52mohm @ 14a, 10v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 107w (tc). The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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IRF540A(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)

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