ON Semiconductor HUFA75645S3S

HUFA75645S3S ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
HUFA75645
Gate Charge (Qg) (Max) @ Vgs:
238nC @ 20V
Rds On (Max) @ Id, Vgs:
14mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3790pF @ 25V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
310W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is HUFA75645S3S. It features n-channel 100v 75a (tc) 310w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: hufa75645. The maximum gate charge and given voltages include 238nc @ 20v. It has a maximum Rds On and voltage of 14mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3790pf @ 25v. The product is available in surface mount configuration. The product ultrafet™, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 310w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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HUFA75645S3S(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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