ON Semiconductor HUF76639P3

HUF76639P3 ON Semiconductor
HUF76639P3
ON Semiconductor

Product Information

Base Part Number:
HUF76
Detailed Description:
N-Channel 100V 51A (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
2400pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
UltraFET™
Gate Charge (Qg) (Max) @ Vgs:
86nC @ 10V
Rds On (Max) @ Id, Vgs:
26mOhm @ 51A, 10V
Supplier Device Package:
TO-220-3
Packaging:
Tube
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HUF76639P3. Base Part Number: huf76. It features n-channel 100v 51a (tc) through hole to-220-3. The product's input capacitance at maximum includes 2400pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product ultrafet™, is a highly preferred choice for users. The maximum gate charge and given voltages include 86nc @ 10v. It has a maximum Rds On and voltage of 26mohm @ 51a, 10v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 51a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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HUF76639P3, HUF76639S3S(Datasheets)

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