ON Semiconductor HUF76629D3ST-F085

HUF76629D3ST-F085 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 100V 20A (Tc) 150W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
HUF76
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
52mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1280pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, UltraFET™
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Customer Reference:
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is HUF76629D3ST-F085. It features n-channel 100v 20a (tc) 150w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: huf76. The maximum gate charge and given voltages include 43nc @ 10v. It has a maximum Rds On and voltage of 52mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±16v. The product's input capacitance at maximum includes 1280pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, ultrafet™, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 20a (tc). The product carries maximum power dissipation 150w (tc). This product use mosfet (metal oxide) technology.

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Logo 17/Aug/2017(PCN Design/Specification)
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1Q2018 Product EOL 31/Mar/2018(PCN Obsolescence/ EOL)
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HUF76629D3ST_F085(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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