ON Semiconductor FQU10N20TU_AM002

FQU10N20TU_AM002 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
FQU1
Detailed Description:
N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
670pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 250µA
Series:
QFET®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 3.8A, 10V
Supplier Device Package:
I-PAK
Packaging:
Tube
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
2.5W (Ta), 51W (Tc)
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
7.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FQU10N20TU_AM002. Base Part Number: fqu1. It features n-channel 200v 7.6a (tc) 2.5w (ta), 51w (tc) through hole i-pak. The product's input capacitance at maximum includes 670pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product qfet®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 360mohm @ 3.8a, 10v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 2.5w (ta), 51w (tc). The product has a 200v drain to source voltage. The continuous current drain at 25°C is 7.6a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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