Maximum Continuous Drain Current:
850 mA
Transistor Material:
Si
Width:
3.56mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4 nC @ 5 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W
Series:
QFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.35 Ω
Manufacturer Standard Lead Time:
45 Weeks
Detailed Description:
N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
FQT4N20
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 5V
Rds On (Max) @ Id, Vgs:
1.35Ohm @ 425mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
850mA (Tc)
Customer Reference:
Power Dissipation (Max):
2.2W (Tc)
Technology:
MOSFET (Metal Oxide)
