ON Semiconductor FQPF6N80CT

FQPF6N80CT ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
7 Weeks
Detailed Description:
N-Channel 800V 5.5A (Tc) 51W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FQPF6
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2.75A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1310pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Customer Reference:
Power Dissipation (Max):
51W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQPF6N80CT. It has typical 7 weeks of manufacturer standard lead time. It features n-channel 800v 5.5a (tc) 51w (tc) through hole to-220f. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fqpf6. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 2.5ohm @ 2.75a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1310pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (tc). The product carries maximum power dissipation 51w (tc). This product use mosfet (metal oxide) technology.

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FQP(F)6N80C(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Passivation Material 26/June/2007(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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