ON Semiconductor FQPF3N25

FQPF3N25 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 250V 2.3A (Tc) 27W (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FQPF3
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 10V
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 1.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
170pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2.3A (Tc)
Customer Reference:
Power Dissipation (Max):
27W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQPF3N25. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 250v 2.3a (tc) 27w (tc) through hole to-220f-3. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fqpf3. The maximum gate charge and given voltages include 5.2nc @ 10v. It has a maximum Rds On and voltage of 2.2ohm @ 1.15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 170pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220f-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 2.3a (tc). The product carries maximum power dissipation 27w (tc). This product use mosfet (metal oxide) technology.

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FQPF3N25(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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