ON Semiconductor FQPF28N15

FQPF28N15 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 150V 16.7A (Tc) 60W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FQPF2
Gate Charge (Qg) (Max) @ Vgs:
52nC @ 10V
Rds On (Max) @ Id, Vgs:
90mOhm @ 8.35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
16.7A (Tc)
Customer Reference:
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQPF28N15. It features n-channel 150v 16.7a (tc) 60w (tc) through hole to-220f. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fqpf2. The maximum gate charge and given voltages include 52nc @ 10v. It has a maximum Rds On and voltage of 90mohm @ 8.35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 1600pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 16.7a (tc). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology.

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FQPF28N15(Datasheets)

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