ON Semiconductor FQPF19N20CYDTU

FQPF19N20CYDTU ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 200V 19A (Tc) 43W (Tc) Through Hole TO-220F-3 (Y-Forming)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Formed Leads
Base Part Number:
FQPF1
Gate Charge (Qg) (Max) @ Vgs:
53nC @ 10V
Rds On (Max) @ Id, Vgs:
170mOhm @ 9.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1080pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3 (Y-Forming)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Customer Reference:
Power Dissipation (Max):
43W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQPF19N20CYDTU. It features n-channel 200v 19a (tc) 43w (tc) through hole to-220f-3 (y-forming). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, formed leads. Base Part Number: fqpf1. The maximum gate charge and given voltages include 53nc @ 10v. It has a maximum Rds On and voltage of 170mohm @ 9.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1080pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220f-3 (y-forming) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 19a (tc). The product carries maximum power dissipation 43w (tc). This product use mosfet (metal oxide) technology.

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