Category:
Power MOSFET
Dimensions:
10.1 x 4.7 x 9.4mm
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1180 pF @ 25 V
Length:
10.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
120 W
Series:
QFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
9.4mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
22 mΩ
Detailed Description:
N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FQP5
Gate Charge (Qg) (Max) @ Vgs:
41nC @ 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1540pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
120W (Tc)
Technology:
MOSFET (Metal Oxide)
