ON Semiconductor FQP19N10L

FQP19N10L ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 100V 19A (Tc) 75W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FQP1
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 9.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
870pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQP19N10L. It features n-channel 100v 19a (tc) 75w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fqp1. The maximum gate charge and given voltages include 18nc @ 5v. It has a maximum Rds On and voltage of 100mohm @ 9.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 870pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 19a (tc). The product carries maximum power dissipation 75w (tc). This product use mosfet (metal oxide) technology.

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FQP19N10L(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)

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