Maximum Continuous Drain Current:
380 mA
Transistor Material:
Si
Width:
4.19mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.9 nC @ 10 V
Channel Type:
N
Length:
5.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
2.08 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6 Ω
Manufacturer Standard Lead Time:
21 Weeks
Detailed Description:
N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Base Part Number:
FQN1
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
Rds On (Max) @ Id, Vgs:
6Ohm @ 190mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
195pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
380mA (Tc)
Customer Reference:
Power Dissipation (Max):
890mW (Ta), 2.08W (Tc)
Technology:
MOSFET (Metal Oxide)
