ON Semiconductor FQI2N30TU

FQI2N30TU ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 300V 2.1A (Tc) 3.13W (Ta), 40W (Tc) Through Hole I2PAK (TO-262)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number:
FQI2
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 1.05A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
300V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
130pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2.1A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQI2N30TU. It features n-channel 300v 2.1a (tc) 3.13w (ta), 40w (tc) through hole i2pak (to-262). The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. Base Part Number: fqi2. The maximum gate charge and given voltages include 5nc @ 10v. It has a maximum Rds On and voltage of 3.7ohm @ 1.05a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 300v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 130pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 2.1a (tc). The product carries maximum power dissipation 3.13w (ta), 40w (tc). This product use mosfet (metal oxide) technology.

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FQB2N30, FQI2N30(Datasheets)

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