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This is manufactured by ON Semiconductor. The manufacturer part number is FQI10N60CTU. It features n-channel 600v 9.5a (tc) 3.13w (ta), 156w (tc) through hole i2pak (to-262). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. Base Part Number: fqi1. The maximum gate charge and given voltages include 57nc @ 10v. It has a maximum Rds On and voltage of 730mohm @ 4.75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2040pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 9.5a (tc). The product carries maximum power dissipation 3.13w (ta), 156w (tc). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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