Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Minimum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
530 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Detailed Description:
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD8
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
530mOhm @ 3.3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Technology:
MOSFET (Metal Oxide)
