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ON Semiconductor FQD6N25TM

FQD6N25TM ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 250V 4.4A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD6
Gate Charge (Qg) (Max) @ Vgs:
8.5nC @ 10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 45W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQD6N25TM. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 250v 4.4a (tc) 2.5w (ta), 45w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd6. The maximum gate charge and given voltages include 8.5nc @ 10v. It has a maximum Rds On and voltage of 1ohm @ 2.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 300pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d-pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.4a (tc). The product carries maximum power dissipation 2.5w (ta), 45w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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FQD6N25(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor FQD6N25TM. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor FQD6N25TM. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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