ON Semiconductor FQD5N20LTM

FQD5N20LTM ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD5
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 5V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 1.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
325pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 37W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQD5N20LTM. It has typical 18 weeks of manufacturer standard lead time. It features n-channel 200v 3.8a (tc) 2.5w (ta), 37w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd5. The maximum gate charge and given voltages include 6.2nc @ 5v. It has a maximum Rds On and voltage of 1.2ohm @ 1.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 325pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d-pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.8a (tc). The product carries maximum power dissipation 2.5w (ta), 37w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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FQD5N20L(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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