ON Semiconductor FQD3P50TM-F085
Product Information
Detailed Description:
P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD3P50
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V
Rds On (Max) @ Id, Vgs:
4.9Ohm @ 1.05A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, QFET®
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.1A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 50W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FQD3P50TM-F085 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQD3P50TM-F085. It features p-channel 500v 2.1a (tc) 2.5w (ta), 50w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd3p50. The maximum gate charge and given voltages include 23nc @ 10v. It has a maximum Rds On and voltage of 4.9ohm @ 1.05a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 660pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, qfet®, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.1a (tc). The product carries maximum power dissipation 2.5w (ta), 50w (tc). This product use mosfet (metal oxide) technology.
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