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ON Semiconductor FQB8N60CTM-WS

FQB8N60CTM-WS ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB8
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1255pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 147W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQB8N60CTM-WS. It features n-channel 600v 7.5a (tc) 3.13w (ta), 147w (tc) surface mount d²pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb8. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 1.2ohm @ 3.75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1255pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.5a (tc). The product carries maximum power dissipation 3.13w (ta), 147w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assem/Test Add 25/Jul/2019(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Device EOL 19/May/2017(PCN Obsolescence/ EOL)
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FQB8N60C, FQI8N60C(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor FQB8N60CTM-WS. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor FQB8N60CTM-WS. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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