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ON Semiconductor FQB22P10TM-F085

FQB22P10TM-F085 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
P-Channel 100V 22A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB2
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 11A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Customer Reference:
Power Dissipation (Max):
3.75W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQB22P10TM-F085. It features p-channel 100v 22a (tc) 3.75w (ta), 125w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb2. The maximum gate charge and given voltages include 50nc @ 10v. It has a maximum Rds On and voltage of 125mohm @ 11a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1500pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 22a (tc). The product carries maximum power dissipation 3.75w (ta), 125w (tc). This product use mosfet (metal oxide) technology.

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1Q2018 Product EOL 31/Mar/2018(PCN Obsolescence/ EOL)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor FQB22P10TM-F085. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor FQB22P10TM-F085. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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