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ON Semiconductor FQB1N60TM

FQB1N60TM ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 600V 1.2A (Tc) 3.13W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB1
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Rds On (Max) @ Id, Vgs:
11.5Ohm @ 600mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Tc)
Customer Reference:
Power Dissipation (Max):
3.13W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FQB1N60TM. It features n-channel 600v 1.2a (tc) 3.13w (ta), 40w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb1. The maximum gate charge and given voltages include 6nc @ 10v. It has a maximum Rds On and voltage of 11.5ohm @ 600ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 150pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1.2a (tc). The product carries maximum power dissipation 3.13w (ta), 40w (tc). This product use mosfet (metal oxide) technology.

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FQB1N60, FQI1N60(Datasheets)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor FQB1N60TM. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor FQB1N60TM. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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