ON Semiconductor FQB11N40CTM

FQB11N40CTM ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FQB1
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
530mOhm @ 5.25A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
400V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1090pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10.5A (Tc)
Customer Reference:
Power Dissipation (Max):
135W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQB11N40CTM. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 400v 10.5a (tc) 135w (tc) surface mount d²pak (to-263ab). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fqb1. The maximum gate charge and given voltages include 35nc @ 10v. It has a maximum Rds On and voltage of 530mohm @ 5.25a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 400v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1090pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10.5a (tc). The product carries maximum power dissipation 135w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly Chgs 21/Dec/2020(PCN Assembly/Origin)
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FQB11N40C(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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