ON Semiconductor FQA8N80C_F109
Product Information
Detailed Description:
N-Channel 800V 8.4A (Tc) 220W (Tc) Through Hole TO-3P
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FQA8
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
1.55Ohm @ 4.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2050pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3P
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8.4A (Tc)
Customer Reference:
Power Dissipation (Max):
220W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FQA8N80C_F109 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FQA8N80C_F109. It features n-channel 800v 8.4a (tc) 220w (tc) through hole to-3p. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Base Part Number: fqa8. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 1.55ohm @ 4.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2050pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 8.4a (tc). The product carries maximum power dissipation 220w (tc). This product use mosfet (metal oxide) technology.
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