Maximum Continuous Drain Current:
50 A
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
Power56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
±16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
13.5 mΩ
Manufacturer Standard Lead Time:
23 Weeks
Detailed Description:
P-Channel 40V 50A (Tc) 75W (Tj) Surface Mount 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDWS9
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 50A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
2320pF @ 20V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tj)
Technology:
MOSFET (Metal Oxide)
