ON Semiconductor FDV301N-NB9V005

FDV301N-NB9V005 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
FDV30
Detailed Description:
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.06V @ 250µA
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
Supplier Device Package:
SOT-23
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
350mW (Ta)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDV301N-NB9V005. Base Part Number: fdv30. It features n-channel 25v 220ma (ta) 350mw (ta) surface mount sot-23. The product's input capacitance at maximum includes 9.5pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.06v @ 250µa. The maximum gate charge and given voltages include 0.7nc @ 4.5v. It has a maximum Rds On and voltage of 4ohm @ 400ma, 4.5v. sot-23 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 350mw (ta). The product has a 25v drain to source voltage. The continuous current drain at 25°C is 220ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Logo 17/Aug/2017(PCN Design/Specification)
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FDV301N(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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