Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
10.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.6mm
Width:
3.56mm
Length:
6.5mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
72 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
FDT439
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Rds On (Max) @ Id, Vgs:
45mOhm @ 6.3A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Customer Reference:
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
