Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.4mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
565 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
43 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
139 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
9.4mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
850 mΩ
Manufacturer Standard Lead Time:
9 Weeks
Detailed Description:
N-Channel 500V 8A (Tc) 130W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP8
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
735pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Customer Reference:
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
