ON Semiconductor FDP6030L

FDP6030L ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 30V 48A (Ta) 52W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP60
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 5V
Rds On (Max) @ Id, Vgs:
13mOhm @ 26A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 15V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
48A (Ta)
Customer Reference:
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FDP6030L. It features n-channel 30v 48a (ta) 52w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -65°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fdp60. The maximum gate charge and given voltages include 18nc @ 5v. It has a maximum Rds On and voltage of 13mohm @ 26a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1250pf @ 15v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 48a (ta). The product carries maximum power dissipation 52w (tc). This product use mosfet (metal oxide) technology.

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FDB6030L, FDP6030L(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)

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