ON Semiconductor FDP150N10

FDP150N10 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 100V 57A (Tc) 110W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP150
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 49A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4760pF @ 25V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Customer Reference:
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDP150N10. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 100v 57a (tc) 110w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fdp150. The maximum gate charge and given voltages include 69nc @ 10v. It has a maximum Rds On and voltage of 15mohm @ 49a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4760pf @ 25v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 57a (tc). The product carries maximum power dissipation 110w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Asembly Chg 7/May/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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SOA curve 01/Jul/2013(PCN Design/Specification)
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FDP150N10(Datasheets)
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TO220B03 Pkg Drawing(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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