Maximum Continuous Drain Current:
2.2 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 nC @ 4.5 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
65 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
FDN337
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
65mOhm @ 2.2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
