Maximum Continuous Drain Current:
130 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
156 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 mΩ
Manufacturer Standard Lead Time:
44 Weeks
Detailed Description:
N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount Power56
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86
Gate Charge (Qg) (Max) @ Vgs:
155nC @ 10V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10680pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
25A (Ta), 130A (Tc)
Customer Reference:
Power Dissipation (Max):
2.7W (Ta), 156W (Tc)
Technology:
MOSFET (Metal Oxide)
