Maximum Continuous Drain Current:
151 A
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
138 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
3.2 mΩ
Manufacturer Standard Lead Time:
44 Weeks
Detailed Description:
N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount Power56
Vgs(th) (Max) @ Id:
4V @ 370µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86
Gate Charge (Qg) (Max) @ Vgs:
54nC @ 6V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 67A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6215pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
151A (Tc)
Customer Reference:
Power Dissipation (Max):
138W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS86180. While 151 a of maximum continuous drain current. Furthermore, the product is 6mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 138 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 3.2 mω maximum drain source resistance. It has typical 44 weeks of manufacturer standard lead time. It features n-channel 100v 151a (tc) 138w (tc) surface mount power56. The typical Vgs (th) (max) of the product is 4v @ 370µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms86. The maximum gate charge and given voltages include 54nc @ 6v. It has a maximum Rds On and voltage of 3.2mohm @ 67a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6215pf @ 50v. The product powertrench®, is a highly preferred choice for users. power56 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 151a (tc). The product carries maximum power dissipation 138w (tc). This product use mosfet (metal oxide) technology.
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