Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
2.1 mΩ
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Detailed Description:
N-Channel 25V 33A (Ta), 90A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS85
Gate Charge (Qg) (Max) @ Vgs:
81nC @ 10V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
5118pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 90A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
