ON Semiconductor FDMS7572S

FDMS7572S ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 25V 23A (Ta), 49A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS75
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 23A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2780pF @ 13V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 49A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 46W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMS7572S. It features n-channel 25v 23a (ta), 49a (tc) 2.5w (ta), 46w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms75. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 2.9mohm @ 23a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2780pf @ 13v. The product is available in surface mount configuration. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 23a (ta), 49a (tc). The product carries maximum power dissipation 2.5w (ta), 46w (tc). This product use mosfet (metal oxide) technology.

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FDMSyyy 16/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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