ON Semiconductor FDMC86102

FDMC86102 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 100V 7A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMC86
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
965pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power33
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 20A (Tc)
Customer Reference:
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMC86102. It has typical 46 weeks of manufacturer standard lead time. It features n-channel 100v 7a (ta), 20a (tc) 2.3w (ta), 41w (tc) surface mount power33. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdmc86. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 24mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 965pf @ 50v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. power33 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta), 20a (tc). The product carries maximum power dissipation 2.3w (ta), 41w (tc). This product use mosfet (metal oxide) technology.

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Wafer 6/8 Inch Addition 16/Jun/2014(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMC86102(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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