Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 1.05mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
3.1 mΩ
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3250 pF@ 15 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMC76
Gate Charge (Qg) (Max) @ Vgs:
66nC @ 10V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4325pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
Power33
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 40A (Tc)
Customer Reference:
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
