ON Semiconductor FDMC008N08C

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
37 Weeks
Detailed Description:
N-Channel 80V 60A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id:
4V @ 120µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
FDMC008
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 21A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2150pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (3.3x3.3), Power33
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Customer Reference:
Power Dissipation (Max):
57W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMC008N08C. It has typical 37 weeks of manufacturer standard lead time. It features n-channel 80v 60a (tc) 57w (tc) surface mount 8-pqfn (3.3x3.3), power33. The typical Vgs (th) (max) of the product is 4v @ 120µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: fdmc008. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 7.8mohm @ 21a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2150pf @ 40v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-pqfn (3.3x3.3), power33 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 57w (tc). This product use mosfet (metal oxide) technology.

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FDMC008N08C(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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