Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.5 nC @ 10 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
21 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 9A (Ta), 10A (Tc) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
FDMA88
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 10A (Tc)
Customer Reference:
Power Dissipation (Max):
2.4W (Ta)
Technology:
MOSFET (Metal Oxide)
