Category:
Power MOSFET
Dimensions:
2 x 2 x 0.75mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1260 pF @ 10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
37 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.9 W, 700 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.75mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
32 mΩ
Detailed Description:
N-Channel 20V 9.4A (Ta) 1.9W (Ta) Surface Mount 6-MicroFET (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
FDMA76
Gate Charge (Qg) (Max) @ Vgs:
17.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 9.4A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta)
Customer Reference:
Power Dissipation (Max):
1.9W (Ta)
Technology:
MOSFET (Metal Oxide)
