ON Semiconductor FDI9406-F085

FDI9406-F085 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 40V 110A (Tc) 176W (Tj) Through Hole I2PAK (TO-262)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number:
FDI9406
Gate Charge (Qg) (Max) @ Vgs:
138nC @ 10V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7710pF @ 25V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Customer Reference:
Power Dissipation (Max):
176W (Tj)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDI9406-F085. It features n-channel 40v 110a (tc) 176w (tj) through hole i2pak (to-262). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. Base Part Number: fdi9406. The maximum gate charge and given voltages include 138nc @ 10v. It has a maximum Rds On and voltage of 2.2mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7710pf @ 25v. The product is available in through hole configuration. The product automotive, aec-q101, powertrench®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 110a (tc). The product carries maximum power dissipation 176w (tj). This product use mosfet (metal oxide) technology.

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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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FDI9406-F085(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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