ON Semiconductor FDG410NZ

FDG410NZ ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 20V 2.2A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
FDG410
Gate Charge (Qg) (Max) @ Vgs:
7.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
70mOhm @ 2.2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
535pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
420mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDG410NZ. It features n-channel 20v 2.2a (ta) 420mw (ta) surface mount sc-88 (sc-70-6). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Base Part Number: fdg410. The maximum gate charge and given voltages include 7.2nc @ 4.5v. It has a maximum Rds On and voltage of 70mohm @ 2.2a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 535pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. sc-88 (sc-70-6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 420mw (ta). This product use mosfet (metal oxide) technology.

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FDGYYY 03/Dec/2019(PCN Assembly/Origin)
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FDG410NZ(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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