Category:
Power MOSFET
Dimensions:
2 x 1.25 x 1mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
477 pF @ -6 V
Length:
2mm
Pin Count:
6
Forward Transconductance:
6.8S
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
750 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
215 mΩ
Detailed Description:
P-Channel 12V 2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
FDG330
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
110mOhm @ 2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
477pF @ 6V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Customer Reference:
Power Dissipation (Max):
750mW (Ta)
Technology:
MOSFET (Metal Oxide)
